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Overview of Phase-Change Electrical Probe Memory

1
School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, China
2
Shanghai Aerospace Electronic Technology Institute, Minxing district, Shanghai 201108, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(10), 772; https://doi.org/10.3390/nano8100772
Received: 10 August 2018 / Revised: 18 September 2018 / Accepted: 27 September 2018 / Published: 29 September 2018
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects. View Full-Text
Keywords: probe; phase-change; capping; bottom; optimization probe; phase-change; capping; bottom; optimization
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MDPI and ACS Style

Wang, L.; Ren, W.; Wen, J.; Xiong, B. Overview of Phase-Change Electrical Probe Memory. Nanomaterials 2018, 8, 772.

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