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Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers

1
JARA-FIT, 52056 Aachen, Germany
2
Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
3
JARA-FIT, 52425 Jülich, Germany
4
Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
5
Department of Chemical Engineering, Indian Institute of Science, Bangalore 560012, India
*
Author to whom correspondence should be addressed.
Nanomaterials 2017, 7(11), 370; https://doi.org/10.3390/nano7110370
Received: 28 September 2017 / Revised: 27 October 2017 / Accepted: 31 October 2017 / Published: 4 November 2017
(This article belongs to the Special Issue ZnO and TiO2 Based Nanostructures)
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Abstract

Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching. View Full-Text
Keywords: TiO2 nanoparticles; self-assembly; resistive switching TiO2 nanoparticles; self-assembly; resistive switching
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Schmidt, D.O.; Raab, N.; Noyong, M.; Santhanam, V.; Dittmann, R.; Simon, U. Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers. Nanomaterials 2017, 7, 370.

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