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Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers

JARA-FIT, 52056 Aachen, Germany
Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
JARA-FIT, 52425 Jülich, Germany
Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
Department of Chemical Engineering, Indian Institute of Science, Bangalore 560012, India
Author to whom correspondence should be addressed.
Nanomaterials 2017, 7(11), 370;
Received: 28 September 2017 / Revised: 27 October 2017 / Accepted: 31 October 2017 / Published: 4 November 2017
(This article belongs to the Special Issue ZnO and TiO2 Based Nanostructures)
PDF [5796 KB, uploaded 4 November 2017]


Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching. View Full-Text
Keywords: TiO2 nanoparticles; self-assembly; resistive switching TiO2 nanoparticles; self-assembly; resistive switching

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Schmidt, D.O.; Raab, N.; Noyong, M.; Santhanam, V.; Dittmann, R.; Simon, U. Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers. Nanomaterials 2017, 7, 370.

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