Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
AbstractResistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching. View Full-Text
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Schmidt, D.O.; Raab, N.; Noyong, M.; Santhanam, V.; Dittmann, R.; Simon, U. Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers. Nanomaterials 2017, 7, 370.
Schmidt DO, Raab N, Noyong M, Santhanam V, Dittmann R, Simon U. Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers. Nanomaterials. 2017; 7(11):370.Chicago/Turabian Style
Schmidt, Dirk O.; Raab, Nicolas; Noyong, Michael; Santhanam, Venugopal; Dittmann, Regina; Simon, Ulrich. 2017. "Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers." Nanomaterials 7, no. 11: 370.
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