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Journal: Nanomaterials, 2017
Volume: 7
Number: 286
Article:
An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
Authors:
by
Hang Yang, Shiqiao Qin, Xiaoming Zheng, Guang Wang, Yuan Tan, Gang Peng and Xueao Zhang
Link:
https://www.mdpi.com/2079-4991/7/10/286
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