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Journal: Nanomaterials, 2017
Volume: 7
Number: 286
286
Article: An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
Authors: by Hang Yang, Shiqiao Qin, Xiaoming Zheng, Guang Wang, Yuan Tan, Gang Peng and Xueao Zhang
Link: https://www.mdpi.com/2079-4991/7/10/286

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