Zhao, X.; Miao, Y.; Su, J.; Du, J.; Ren, Y.; Li, B.; Dong, T.; Duan, X.; Su, X.; Radamson, H.H.
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications. Nanomaterials 2026, 16, 295.
https://doi.org/10.3390/nano16050295
AMA Style
Zhao X, Miao Y, Su J, Du J, Ren Y, Li B, Dong T, Duan X, Su X, Radamson HH.
Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications. Nanomaterials. 2026; 16(5):295.
https://doi.org/10.3390/nano16050295
Chicago/Turabian Style
Zhao, Xuewei, Yuanhao Miao, Jiale Su, Junhao Du, Yuhui Ren, Ben Li, Tianyu Dong, Xiangliang Duan, Xueyin Su, and Henry H. Radamson.
2026. "Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications" Nanomaterials 16, no. 5: 295.
https://doi.org/10.3390/nano16050295
APA Style
Zhao, X., Miao, Y., Su, J., Du, J., Ren, Y., Li, B., Dong, T., Duan, X., Su, X., & Radamson, H. H.
(2026). Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications. Nanomaterials, 16(5), 295.
https://doi.org/10.3390/nano16050295