Jiang, J.; Chen, H.; Yang, F.; Li, C.; He, J.; Wang, X.; Cui, J.
The Frequency Response Characteristics of Ge-on-Si Photodetectors Under High Incident Power. Nanomaterials 2025, 15, 398.
https://doi.org/10.3390/nano15050398
AMA Style
Jiang J, Chen H, Yang F, Li C, He J, Wang X, Cui J.
The Frequency Response Characteristics of Ge-on-Si Photodetectors Under High Incident Power. Nanomaterials. 2025; 15(5):398.
https://doi.org/10.3390/nano15050398
Chicago/Turabian Style
Jiang, Jin, Hongmin Chen, Fenghe Yang, Chunlai Li, Jin He, Xiumei Wang, and Jishi Cui.
2025. "The Frequency Response Characteristics of Ge-on-Si Photodetectors Under High Incident Power" Nanomaterials 15, no. 5: 398.
https://doi.org/10.3390/nano15050398
APA Style
Jiang, J., Chen, H., Yang, F., Li, C., He, J., Wang, X., & Cui, J.
(2025). The Frequency Response Characteristics of Ge-on-Si Photodetectors Under High Incident Power. Nanomaterials, 15(5), 398.
https://doi.org/10.3390/nano15050398