Bercha, A.; Chlipała, M.; Hajdel, M.; Muzioł, G.; Siekacz, M.; Turski, H.; Trzeciakowski, W.
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities. Nanomaterials 2025, 15, 112.
https://doi.org/10.3390/nano15020112
AMA Style
Bercha A, Chlipała M, Hajdel M, Muzioł G, Siekacz M, Turski H, Trzeciakowski W.
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities. Nanomaterials. 2025; 15(2):112.
https://doi.org/10.3390/nano15020112
Chicago/Turabian Style
Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, Grzegorz Muzioł, Marcin Siekacz, Henryk Turski, and Witold Trzeciakowski.
2025. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities" Nanomaterials 15, no. 2: 112.
https://doi.org/10.3390/nano15020112
APA Style
Bercha, A., Chlipała, M., Hajdel, M., Muzioł, G., Siekacz, M., Turski, H., & Trzeciakowski, W.
(2025). Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities. Nanomaterials, 15(2), 112.
https://doi.org/10.3390/nano15020112