Kim, S.-H.; Lee, S.-Y.; Kim, T.-J.; Kyhm, K.; Watanabe, K.; Taniguchi, T.; Yee, K.-J.
Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe2 Field-Effect Transistor. Nanomaterials 2025, 15, 1413.
https://doi.org/10.3390/nano15181413
AMA Style
Kim S-H, Lee S-Y, Kim T-J, Kyhm K, Watanabe K, Taniguchi T, Yee K-J.
Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe2 Field-Effect Transistor. Nanomaterials. 2025; 15(18):1413.
https://doi.org/10.3390/nano15181413
Chicago/Turabian Style
Kim, Sung-Ha, Seong-Yeon Lee, Tae-Jeong Kim, Kwangseuk Kyhm, Kenji Watanabe, Takashi Taniguchi, and Ki-Ju Yee.
2025. "Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe2 Field-Effect Transistor" Nanomaterials 15, no. 18: 1413.
https://doi.org/10.3390/nano15181413
APA Style
Kim, S.-H., Lee, S.-Y., Kim, T.-J., Kyhm, K., Watanabe, K., Taniguchi, T., & Yee, K.-J.
(2025). Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe2 Field-Effect Transistor. Nanomaterials, 15(18), 1413.
https://doi.org/10.3390/nano15181413