Order Article Reprints

Zhang Q, Wang C, Wang W, Sun R, Zheng R, Ji Q, Yan H, Wang Z, He X, Wang H, et al. Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe₂ and Rotationally Aligned h-BN Monolayer. Nanomaterials. 2025; 15(16):1246. https://doi.org/10.3390/nano15161246

Zhang, Qiaoxuan, Cong Wang, Wenjie Wang, Rong Sun, Rongjie Zheng, Qingchang Ji, Hongwei Yan, Zhengbo Wang, Xin He, Hongyan Wang, and et al. 2025. "Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe₂ and Rotationally Aligned h-BN Monolayer" Nanomaterials 15, no. 16: 1246. https://doi.org/10.3390/nano15161246

Zhang, Q., Wang, C., Wang, W., Sun, R., Zheng, R., Ji, Q., Yan, H., Wang, Z., He, X., Wang, H., Yang, C., Yu, J., Zhang, L., Lei, M., & Wang, Z. (2025). Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe₂ and Rotationally Aligned h-BN Monolayer. Nanomaterials, 15(16), 1246. https://doi.org/10.3390/nano15161246