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Journal: NanomaterialsVolume: 15Number: 780
Article: Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)
- Authors:
- Yih-Shing Lee1,*,
- Chih-Hsiang Chang2 and
- Bing-Shin Le1
- et al.
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