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Journal: Nanomaterials, 2024
Volume: 14
Number: 1960

Article: Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects
Authors: by Shun Song, Lu Qin, Zhi Wang, Juan Lyu, Jian Gong and Shenyuan Yang
Link: https://www.mdpi.com/2079-4991/14/23/1960

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