Deng, C.; Tang, C.; Wang, P.; Cheng, W.-C.; Du, F.; Wen, K.; Zhang, Y.; Jiang, Y.; Tao, N.; Wang, Q.;
et al. Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique. Nanomaterials 2024, 14, 1817.
https://doi.org/10.3390/nano14221817
AMA Style
Deng C, Tang C, Wang P, Cheng W-C, Du F, Wen K, Zhang Y, Jiang Y, Tao N, Wang Q,
et al. Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique. Nanomaterials. 2024; 14(22):1817.
https://doi.org/10.3390/nano14221817
Chicago/Turabian Style
Deng, Chenkai, Chuying Tang, Peiran Wang, Wei-Chih Cheng, Fangzhou Du, Kangyao Wen, Yi Zhang, Yang Jiang, Nick Tao, Qing Wang,
and et al. 2024. "Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique" Nanomaterials 14, no. 22: 1817.
https://doi.org/10.3390/nano14221817
APA Style
Deng, C., Tang, C., Wang, P., Cheng, W.-C., Du, F., Wen, K., Zhang, Y., Jiang, Y., Tao, N., Wang, Q., & Yu, H.
(2024). Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique. Nanomaterials, 14(22), 1817.
https://doi.org/10.3390/nano14221817