Wang, B.; Zeng, Y.; Yu, X.; Gao, W.; Chen, W.; Shen, H.; Qin, L.; Ning, Y.; Wang, L.
Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures. Nanomaterials 2024, 14, 1469.
https://doi.org/10.3390/nano14181469
AMA Style
Wang B, Zeng Y, Yu X, Gao W, Chen W, Shen H, Qin L, Ning Y, Wang L.
Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures. Nanomaterials. 2024; 14(18):1469.
https://doi.org/10.3390/nano14181469
Chicago/Turabian Style
Wang, Bin, Yugang Zeng, Xuezhe Yu, Weijie Gao, Wei Chen, Haoyu Shen, Li Qin, Yongqiang Ning, and Lijun Wang.
2024. "Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures" Nanomaterials 14, no. 18: 1469.
https://doi.org/10.3390/nano14181469
APA Style
Wang, B., Zeng, Y., Yu, X., Gao, W., Chen, W., Shen, H., Qin, L., Ning, Y., & Wang, L.
(2024). Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures. Nanomaterials, 14(18), 1469.
https://doi.org/10.3390/nano14181469