Order Article Reprints

Yao Y-J, Yang C-R, Tseng T-Y, Chang H-J, Lin T-J, Luo G-L, Hou F-J, Wu Y-C, Chang-Liao K-S. High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET. Nanomaterials. 2023; 13(8):1310. https://doi.org/10.3390/nano13081310

Yao, Yi-Ju, Ching-Ru Yang, Ting-Yu Tseng, Heng-Jia Chang, Tsai-Jung Lin, Guang-Li Luo, Fu-Ju Hou, Yung-Chun Wu, and Kuei-Shu Chang-Liao. 2023. "High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET" Nanomaterials 13, no. 8: 1310. https://doi.org/10.3390/nano13081310

Yao, Y.-J., Yang, C.-R., Tseng, T.-Y., Chang, H.-J., Lin, T.-J., Luo, G.-L., Hou, F.-J., Wu, Y.-C., & Chang-Liao, K.-S. (2023). High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET. Nanomaterials, 13(8), 1310. https://doi.org/10.3390/nano13081310