2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
Abstract
:1. Introduction
2. Samples and Characterization Methods
3. Results and Discussion
3.1. Growth Kinetics of GaN/AlN MQW Structures
3.2. Stress Evolution during the Growth of GaN/AlN MQWs
3.3. Structural Properties of GaN/AlN MQWs Structures
3.3.1. Surface Topographies of MQW Structures
3.3.2. Studies of GaN/AlN MQW Structures Using X-ray Diffraction (XRD) and Reflectometry (XRR)
3.3.3. HAADF STEM Study of the GaN/AlN MQW Structure
3.4. Studies of the Optical Properties of GaN/AlN MQW Structures
3.4.1. Photoluminescence Spectra
3.4.2. Cathodoluminescence (CL) Spectra
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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AlN Test Layer | Q1.2-0.6-S | Q1.5-1.1-S | Q1.5-2.2-S | Q1.5-1.1-D2 | Q1.5-2.2-D1 | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Scanning Area * | Scanning Area | Scanning Area | Scanning Area | Scanning Area | Scanning Area | |||||||||||||
A | B | C | A | B | C | A | B | C | A | B | C | A | B | C | A | B | C | |
RMS, nm | 0.54 | 0.59 | 0.43 | 8.1 | 8.2 | 9.3 | 0.57 | 0.51 | 0.35 | 1.27 | 1.27 | 0.79 | 0.51 | 0.34 | 0.31 | 10.2 | 0.67 | 0.20 |
# Sample | Average Al Content, | MQW Period | RMS Surface | ||
---|---|---|---|---|---|
Mol.% | nm | nm | |||
Nominal | XRD | Nominal | XRR | XRR | |
Q1.2-0.6-S | 93.0 | 98.6 | 4.269 | 3.69 ± 0.3 | >>1.0 |
100 × Q1.5-2.2-S | 91.1 | 93.9 | 4.373 | 4.30 ± 0.12 | 1.1 |
Q1.5-2.2-S | 91.1 | 96.5 | 4.373 | 4.00 ± 0.08 | 0.8 |
Q1.5-1.1-S | 91.1 | 96.9 | 4.373 | 4.267 ± 0.04 | 0.6 |
Q1.5-2.2-D1 | 91.1 | 96.1 | 4.373 | 4.179 ± 0.035 | 0.5 |
Q1.5-1.1-D2 | 91.1 | 96.1 | 4.373 | 3.894 ± 0.008 | 0.3 |
№ Sample | Roughness Total * | Correlation Lengths | Hurst Parameter | |
---|---|---|---|---|
Lateral | Vertical | |||
nm | nm | nm | ||
Q1.5-1.1-D2 | 0.3 | >200 | - | 0.3 |
Q1.5-1.1-S | 0.6 | >200 | - | 0.6 |
Q1.5-2.2-S | 0.8 | >100 | 4.0 | 1.0 |
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Jmerik, V.; Nechaev, D.; Semenov, A.; Evropeitsev, E.; Shubina, T.; Toropov, A.; Yagovkina, M.; Alekseev, P.; Borodin, B.; Orekhova, K.; et al. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. Nanomaterials 2023, 13, 1077. https://doi.org/10.3390/nano13061077
Jmerik V, Nechaev D, Semenov A, Evropeitsev E, Shubina T, Toropov A, Yagovkina M, Alekseev P, Borodin B, Orekhova K, et al. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. Nanomaterials. 2023; 13(6):1077. https://doi.org/10.3390/nano13061077
Chicago/Turabian StyleJmerik, Valentin, Dmitrii Nechaev, Alexey Semenov, Eugenii Evropeitsev, Tatiana Shubina, Alexey Toropov, Maria Yagovkina, Prokhor Alekseev, Bogdan Borodin, Kseniya Orekhova, and et al. 2023. "2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters" Nanomaterials 13, no. 6: 1077. https://doi.org/10.3390/nano13061077