Lee, T.; Kim, H.-I.; Cho, Y.; Lee, S.; Lee, W.-Y.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Lee, S.-H.; Jang, J.
Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks. Nanomaterials 2023, 13, 2432.
https://doi.org/10.3390/nano13172432
AMA Style
Lee T, Kim H-I, Cho Y, Lee S, Lee W-Y, Bae J-H, Kang I-M, Kim K, Lee S-H, Jang J.
Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks. Nanomaterials. 2023; 13(17):2432.
https://doi.org/10.3390/nano13172432
Chicago/Turabian Style
Lee, Taehun, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, and Jaewon Jang.
2023. "Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks" Nanomaterials 13, no. 17: 2432.
https://doi.org/10.3390/nano13172432
APA Style
Lee, T., Kim, H.-I., Cho, Y., Lee, S., Lee, W.-Y., Bae, J.-H., Kang, I.-M., Kim, K., Lee, S.-H., & Jang, J.
(2023). Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks. Nanomaterials, 13(17), 2432.
https://doi.org/10.3390/nano13172432
