A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication
Abstract
:1. Introduction
2. Device Structure and Fabrication
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameter | O2 Modification | BCl3 Removal |
---|---|---|
ICP power (W) | 400 | 200 |
Bias power (W) | 0 | 6 |
Chamber pressure (mTorr) | 10 | 10 |
Gas flow rate (sccm) | 100 | 100 |
Treatment time (s) | 15 | 5 |
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Wang, L.; Zhang, P.; Zhu, K.; Wang, Q.; Pan, M.; Sun, X.; Huang, Z.; Chen, K.; Yang, Y.; Xie, X.; et al. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials 2023, 13, 2275. https://doi.org/10.3390/nano13162275
Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X, et al. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials. 2023; 13(16):2275. https://doi.org/10.3390/nano13162275
Chicago/Turabian StyleWang, Luyu, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, and et al. 2023. "A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication" Nanomaterials 13, no. 16: 2275. https://doi.org/10.3390/nano13162275