Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Experimental Results
3.2. Theoretical Calculations
3.2.1. Bulk Mn/Ge Substitution
3.2.2. Surface Mn/Ge Substitution
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Estyunina, T.P.; Shikin, A.M.; Estyunin, D.A.; Eryzhenkov, A.V.; Klimovskikh, I.I.; Bokai, K.A.; Golyashov, V.A.; Kokh, K.A.; Tereshchenko, O.E.; Kumar, S.; et al. Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content. Nanomaterials 2023, 13, 2151. https://doi.org/10.3390/nano13142151
Estyunina TP, Shikin AM, Estyunin DA, Eryzhenkov AV, Klimovskikh II, Bokai KA, Golyashov VA, Kokh KA, Tereshchenko OE, Kumar S, et al. Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content. Nanomaterials. 2023; 13(14):2151. https://doi.org/10.3390/nano13142151
Chicago/Turabian StyleEstyunina, Tatiana P., Alexander M. Shikin, Dmitry A. Estyunin, Alexander V. Eryzhenkov, Ilya I. Klimovskikh, Kirill A. Bokai, Vladimir A. Golyashov, Konstantin A. Kokh, Oleg E. Tereshchenko, Shiv Kumar, and et al. 2023. "Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content" Nanomaterials 13, no. 14: 2151. https://doi.org/10.3390/nano13142151