Article Versions Notes

Koryazhkina MN, Filatov DO, Tikhov SV, Belov AI, Serov DA, Kryukov RN, Zubkov SY, Vorontsov VA, Pavlov DA, Gryaznov EG, et al. Electrical Characteristics of CMOS-Compatible SiO_x-Based Resistive-Switching Devices. Nanomaterials. 2023; 13(14):2082. https://doi.org/10.3390/nano13142082

Koryazhkina, Maria N., Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov, and et al. 2023. "Electrical Characteristics of CMOS-Compatible SiO_x-Based Resistive-Switching Devices" Nanomaterials 13, no. 14: 2082. https://doi.org/10.3390/nano13142082

Koryazhkina, M. N., Filatov, D. O., Tikhov, S. V., Belov, A. I., Serov, D. A., Kryukov, R. N., Zubkov, S. Y., Vorontsov, V. A., Pavlov, D. A., Gryaznov, E. G., Orlova, E. S., Shchanikov, S. A., Mikhaylov, A. N., & Kim, S. (2023). Electrical Characteristics of CMOS-Compatible SiO_x-Based Resistive-Switching Devices. Nanomaterials, 13(14), 2082. https://doi.org/10.3390/nano13142082