Koryazhkina, M.N.; Filatov, D.O.; Tikhov, S.V.; Belov, A.I.; Serov, D.A.; Kryukov, R.N.; Zubkov, S.Y.; Vorontsov, V.A.; Pavlov, D.A.; Gryaznov, E.G.;
et al. Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices. Nanomaterials 2023, 13, 2082.
https://doi.org/10.3390/nano13142082
AMA Style
Koryazhkina MN, Filatov DO, Tikhov SV, Belov AI, Serov DA, Kryukov RN, Zubkov SY, Vorontsov VA, Pavlov DA, Gryaznov EG,
et al. Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices. Nanomaterials. 2023; 13(14):2082.
https://doi.org/10.3390/nano13142082
Chicago/Turabian Style
Koryazhkina, Maria N., Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov,
and et al. 2023. "Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices" Nanomaterials 13, no. 14: 2082.
https://doi.org/10.3390/nano13142082
APA Style
Koryazhkina, M. N., Filatov, D. O., Tikhov, S. V., Belov, A. I., Serov, D. A., Kryukov, R. N., Zubkov, S. Y., Vorontsov, V. A., Pavlov, D. A., Gryaznov, E. G., Orlova, E. S., Shchanikov, S. A., Mikhaylov, A. N., & Kim, S.
(2023). Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices. Nanomaterials, 13(14), 2082.
https://doi.org/10.3390/nano13142082
