Article Versions Notes

Park J, Lee S-H, Kang G-E, Heo J-H, Jeon S-R, Kim M-S, Bae S-J, Hong J-W, Jang J-w, Bae J-H, et al. Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries. Nanomaterials. 2023; 13(13):2026. https://doi.org/10.3390/nano13132026

Park, Jin, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, and et al. 2023. "Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries" Nanomaterials 13, no. 13: 2026. https://doi.org/10.3390/nano13132026

Park, J., Lee, S.-H., Kang, G.-E., Heo, J.-H., Jeon, S.-R., Kim, M.-S., Bae, S.-J., Hong, J.-W., Jang, J.-w., Bae, J.-H., Lee, S.-H., & Kang, I.-M. (2023). Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries. Nanomaterials, 13(13), 2026. https://doi.org/10.3390/nano13132026