Lee, Y.; Jun, H.; Park, S.; Kim, D.Y.; Lee, S.
Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model. Nanomaterials 2023, 13, 1809.
https://doi.org/10.3390/nano13111809
AMA Style
Lee Y, Jun H, Park S, Kim DY, Lee S.
Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model. Nanomaterials. 2023; 13(11):1809.
https://doi.org/10.3390/nano13111809
Chicago/Turabian Style
Lee, Youngmin, Hyewon Jun, Seoyeon Park, Deuk Young Kim, and Sejoon Lee.
2023. "Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model" Nanomaterials 13, no. 11: 1809.
https://doi.org/10.3390/nano13111809
APA Style
Lee, Y., Jun, H., Park, S., Kim, D. Y., & Lee, S.
(2023). Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model. Nanomaterials, 13(11), 1809.
https://doi.org/10.3390/nano13111809