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Yoo J-H, Park W-J, Kim S-W, Lee G-R, Kim J-H, Lee J-H, Uhm S-H, Lee H-C. Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. Nanomaterials. 2023; 13(11):1785. https://doi.org/10.3390/nano13111785

Yoo, Jae-Hoon, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, and Hee-Chul Lee. 2023. "Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices" Nanomaterials 13, no. 11: 1785. https://doi.org/10.3390/nano13111785

Yoo, J.-H., Park, W.-J., Kim, S.-W., Lee, G.-R., Kim, J.-H., Lee, J.-H., Uhm, S.-H., & Lee, H.-C. (2023). Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. Nanomaterials, 13(11), 1785. https://doi.org/10.3390/nano13111785