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Journal: Nanomaterials, 2023
Volume: 13
Number: 1740
1740
Article: Interface Optimization and Performance Enhancement of Er₂O₃-Based MOS Devices by ALD-Derived Al₂O₃ Passivation Layers and Annealing Treatment
Authors: by Qiuju Wu, Qing Yu, Gang He, Wenhao Wang, Jinyu Lu, Bo Yao, Shiyan Liu and Zebo Fang
Link: https://www.mdpi.com/2079-4991/13/11/1740

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