Kim, H.; Uddin, I.; Watanabe, K.; Taniguchi, T.; Whang, D.; Kim, G.-H.
Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping. Nanomaterials 2023, 13, 1700.
https://doi.org/10.3390/nano13101700
AMA Style
Kim H, Uddin I, Watanabe K, Taniguchi T, Whang D, Kim G-H.
Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping. Nanomaterials. 2023; 13(10):1700.
https://doi.org/10.3390/nano13101700
Chicago/Turabian Style
Kim, Hanul, Inayat Uddin, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang, and Gil-Ho Kim.
2023. "Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping" Nanomaterials 13, no. 10: 1700.
https://doi.org/10.3390/nano13101700
APA Style
Kim, H., Uddin, I., Watanabe, K., Taniguchi, T., Whang, D., & Kim, G.-H.
(2023). Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping. Nanomaterials, 13(10), 1700.
https://doi.org/10.3390/nano13101700