Order Article Reprints

Mao S, Gao J, He X, Liu W, Liu J, Wang G, Zhou N, Luo Y, Cao L, Zhang R, et al. Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration. Nanomaterials. 2022; 12(7):1218. https://doi.org/10.3390/nano12071218

Mao, Shujuan, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, Yanna Luo, Lei Cao, Ran Zhang, and et al. 2022. "Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration" Nanomaterials 12, no. 7: 1218. https://doi.org/10.3390/nano12071218

Mao, S., Gao, J., He, X., Liu, W., Liu, J., Wang, G., Zhou, N., Luo, Y., Cao, L., Zhang, R., Liu, H., Li, X., Li, Y., Wu, Z., Li, J., Luo, J., Zhao, C., Wang, W., & Yin, H. (2022). Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration. Nanomaterials, 12(7), 1218. https://doi.org/10.3390/nano12071218