Hemmi, Y.; Ikeda, Y.; Sporea, R.A.; Takeda, Y.; Tokito, S.; Matsui, H.
N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain. Nanomaterials 2022, 12, 4441.
https://doi.org/10.3390/nano12244441
AMA Style
Hemmi Y, Ikeda Y, Sporea RA, Takeda Y, Tokito S, Matsui H.
N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain. Nanomaterials. 2022; 12(24):4441.
https://doi.org/10.3390/nano12244441
Chicago/Turabian Style
Hemmi, Yudai, Yuji Ikeda, Radu A. Sporea, Yasunori Takeda, Shizuo Tokito, and Hiroyuki Matsui.
2022. "N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain" Nanomaterials 12, no. 24: 4441.
https://doi.org/10.3390/nano12244441
APA Style
Hemmi, Y., Ikeda, Y., Sporea, R. A., Takeda, Y., Tokito, S., & Matsui, H.
(2022). N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain. Nanomaterials, 12(24), 4441.
https://doi.org/10.3390/nano12244441