Ma, Y.; Bi, J.; Wang, H.; Fan, L.; Zhao, B.; Shen, L.; Liu, M.
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures. Nanomaterials 2022, 12, 4344.
https://doi.org/10.3390/nano12234344
AMA Style
Ma Y, Bi J, Wang H, Fan L, Zhao B, Shen L, Liu M.
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures. Nanomaterials. 2022; 12(23):4344.
https://doi.org/10.3390/nano12234344
Chicago/Turabian Style
Ma, Yue, Jinshun Bi, Hanbin Wang, Linjie Fan, Biyao Zhao, Lizhi Shen, and Mengxin Liu.
2022. "Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures" Nanomaterials 12, no. 23: 4344.
https://doi.org/10.3390/nano12234344
APA Style
Ma, Y., Bi, J., Wang, H., Fan, L., Zhao, B., Shen, L., & Liu, M.
(2022). Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures. Nanomaterials, 12(23), 4344.
https://doi.org/10.3390/nano12234344