Article Versions Notes

Lee S, Jeong J, Yoon J-S, Lee S, Lee J, Lim J, Baek R-H. Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors. Nanomaterials. 2022; 12(19):3349. https://doi.org/10.3390/nano12193349

Lee, Sanguk, Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jaewan Lim, and Rock-Hyun Baek. 2022. "Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors" Nanomaterials 12, no. 19: 3349. https://doi.org/10.3390/nano12193349

Lee, S., Jeong, J., Yoon, J.-S., Lee, S., Lee, J., Lim, J., & Baek, R.-H. (2022). Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors. Nanomaterials, 12(19), 3349. https://doi.org/10.3390/nano12193349