Article Versions Notes

Lee K-J, Weng Y-C, Wang L-W, Lin H-N, Pal P, Chu S-Y, Lu D, Wang Y-H. High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms. Nanomaterials. 2022; 12(18):3252. https://doi.org/10.3390/nano12183252

Lee, Ke-Jing, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, and Yeong-Her Wang. 2022. "High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms" Nanomaterials 12, no. 18: 3252. https://doi.org/10.3390/nano12183252

Lee, K.-J., Weng, Y.-C., Wang, L.-W., Lin, H.-N., Pal, P., Chu, S.-Y., Lu, D., & Wang, Y.-H. (2022). High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms. Nanomaterials, 12(18), 3252. https://doi.org/10.3390/nano12183252