Next Article in Journal
Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions
Next Article in Special Issue
Direct Plasmonic Solar Cell Efficiency Dependence on Spiro-OMeTAD Li-TFSI Content
Previous Article in Journal
Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction
Previous Article in Special Issue
Cost Effective Silver Nanowire-Decorated Graphene Paper for Drop-On SERS Biodetection

Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays

Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy
CNR-IPCF, Istituto per i Processi Chimico-Fisici, Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
CNR-IMM UoS Catania, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95025 Catania, Italy
Authors to whom correspondence should be addressed.
Academic Editors: Vladimir G. Dubrovskii and Karthik Shankar
Nanomaterials 2021, 11(8), 1972;
Received: 27 May 2021 / Revised: 22 July 2021 / Accepted: 29 July 2021 / Published: 31 July 2021
(This article belongs to the Special Issue Nanostructured Materials for Photonics and Plasmonics)
Silicon nanowires (Si NWs) emerged in several application fields as a strategic element to surpass the bulk limits with a flat compatible architecture. The approaches used for the Si NW realization have a crucial impact on their final performances and their final cost. This makes the research on a novel and flexible approach for Si NW fabrication a crucial point for Si NW-based devices. In this work, the novelty is the study of the flexibility of thin film metal-assisted chemical etching (MACE) for the fabrication of Si NWs with the possibility of realizing different doped Si NWs, and even a longitudinal heterojunction p-n inside the same single wire. This point has never been reported by using thin metal film MACE. In particular, we will show how this approach permits one to obtain a high density of vertically aligned Si NWs with the same doping of the substrate and without any particular constraint on doping type and level. Fractal arrays of Si NWs can be fabricated without any type of mask thanks to the self-assembly of gold at percolative conditions. This Si NW fractal array can be used as a substrate to realize controllable artificial fractals, integrating other interesting elements with a cost-effective microelectronics compatible approach. View Full-Text
Keywords: silicon nanowires; MACE metal-assisted chemical etching; fractal; photonics; erbium silicon nanowires; MACE metal-assisted chemical etching; fractal; photonics; erbium
Show Figures

Figure 1

MDPI and ACS Style

Leonardi, A.A.; Lo Faro, M.J.; Miritello, M.; Musumeci, P.; Priolo, F.; Fazio, B.; Irrera, A. Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays. Nanomaterials 2021, 11, 1972.

AMA Style

Leonardi AA, Lo Faro MJ, Miritello M, Musumeci P, Priolo F, Fazio B, Irrera A. Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays. Nanomaterials. 2021; 11(8):1972.

Chicago/Turabian Style

Leonardi, Antonio A., Maria J. Lo Faro, Maria Miritello, Paolo Musumeci, Francesco Priolo, Barbara Fazio, and Alessia Irrera. 2021. "Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays" Nanomaterials 11, no. 8: 1972.

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop