Kaufmann, I.R.; Zerey, O.; Meyers, T.; Reker, J.; Vidor, F.; Hilleringmann, U.
A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. Nanomaterials 2021, 11, 1188.
https://doi.org/10.3390/nano11051188
AMA Style
Kaufmann IR, Zerey O, Meyers T, Reker J, Vidor F, Hilleringmann U.
A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. Nanomaterials. 2021; 11(5):1188.
https://doi.org/10.3390/nano11051188
Chicago/Turabian Style
Kaufmann, Ivan Rodrigo, Onur Zerey, Thorsten Meyers, Julia Reker, Fábio Vidor, and Ulrich Hilleringmann.
2021. "A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application" Nanomaterials 11, no. 5: 1188.
https://doi.org/10.3390/nano11051188
APA Style
Kaufmann, I. R., Zerey, O., Meyers, T., Reker, J., Vidor, F., & Hilleringmann, U.
(2021). A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. Nanomaterials, 11(5), 1188.
https://doi.org/10.3390/nano11051188
