Du, Y.; Kong, Z.; Toprak, M.S.; Wang, G.; Miao, Y.; Xu, B.; Yu, J.; Li, B.; Lin, H.; Han, J.;
et al. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD. Nanomaterials 2021, 11, 928.
https://doi.org/10.3390/nano11040928
AMA Style
Du Y, Kong Z, Toprak MS, Wang G, Miao Y, Xu B, Yu J, Li B, Lin H, Han J,
et al. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD. Nanomaterials. 2021; 11(4):928.
https://doi.org/10.3390/nano11040928
Chicago/Turabian Style
Du, Yong, Zhenzhen Kong, Muhammet S. Toprak, Guilei Wang, Yuanhao Miao, Buqing Xu, Jiahan Yu, Ben Li, Hongxiao Lin, Jianghao Han,
and et al. 2021. "Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD" Nanomaterials 11, no. 4: 928.
https://doi.org/10.3390/nano11040928
APA Style
Du, Y., Kong, Z., Toprak, M. S., Wang, G., Miao, Y., Xu, B., Yu, J., Li, B., Lin, H., Han, J., Dong, Y., Wang, W., & Radamson, H. H.
(2021). Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD. Nanomaterials, 11(4), 928.
https://doi.org/10.3390/nano11040928