Khan, S.A.; Lee, G.H.; Mahata, C.; Ismail, M.; Kim, H.; Kim, S.
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device. Nanomaterials 2021, 11, 315.
https://doi.org/10.3390/nano11020315
AMA Style
Khan SA, Lee GH, Mahata C, Ismail M, Kim H, Kim S.
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device. Nanomaterials. 2021; 11(2):315.
https://doi.org/10.3390/nano11020315
Chicago/Turabian Style
Khan, Sobia Ali, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, and Sungjun Kim.
2021. "Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device" Nanomaterials 11, no. 2: 315.
https://doi.org/10.3390/nano11020315
APA Style
Khan, S. A., Lee, G. H., Mahata, C., Ismail, M., Kim, H., & Kim, S.
(2021). Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device. Nanomaterials, 11(2), 315.
https://doi.org/10.3390/nano11020315