Order Article Reprints

Xie L, Zhu H, Zhang Y, Ai X, Wang G, Li J, Du A, Kong Z, Yin X, Li C, et al. Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium. Nanomaterials. 2020; 10(9):1715. https://doi.org/10.3390/nano10091715

Xie, Lu, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Junjie Li, Anyan Du, Zhenzhen Kong, Xiaogen Yin, Chen Li, and et al. 2020. "Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium" Nanomaterials 10, no. 9: 1715. https://doi.org/10.3390/nano10091715

Xie, L., Zhu, H., Zhang, Y., Ai, X., Wang, G., Li, J., Du, A., Kong, Z., Yin, X., Li, C., Zhao, L., Li, Y., Jia, K., Li, B., & Radamson, H. H. (2020). Strained Si_0.2Ge_0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium. Nanomaterials, 10(9), 1715. https://doi.org/10.3390/nano10091715