Article Versions Notes

Tholapi R, Gallard M, Burle N, Guichet C, Escoubas S, Putero M, Mocuta C, Richard M-I, Chahine R, Sabbione C, et al. Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling. Nanomaterials. 2020; 10(6):1247. https://doi.org/10.3390/nano10061247

Tholapi, Rajkiran, Manon Gallard, Nelly Burle, Christophe Guichet, Stephanie Escoubas, Magali Putero, Cristian Mocuta, Marie-Ingrid Richard, Rebecca Chahine, Chiara Sabbione, and et al. 2020. "Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling" Nanomaterials 10, no. 6: 1247. https://doi.org/10.3390/nano10061247

Tholapi, R., Gallard, M., Burle, N., Guichet, C., Escoubas, S., Putero, M., Mocuta, C., Richard, M.-I., Chahine, R., Sabbione, C., Bernard, M., Fellouh, L., Noé, P., & Thomas, O. (2020). Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling. Nanomaterials, 10(6), 1247. https://doi.org/10.3390/nano10061247