Next Article in Journal
Nanostructured Polyelectrolyte Complexes Based on Water-Soluble Thiacalix[4]Arene and Pillar[5]Arene: Self-Assembly in Micelleplexes and Polyplexes at Packaging DNA
Next Article in Special Issue
Using Dual Microresonant Cavity and Plasmonic Effects to Enhance the Photovoltaic Efficiency of Flexible Polymer Solar Cells
Previous Article in Journal
Surface-Enhanced Raman Scattering and Fluorescence on Gold Nanogratings
Previous Article in Special Issue
Performance of Graphene–CdS Hybrid Nanocomposite Thin Film for Applications in Cu(In,Ga)Se2 Solar Cell and H2 Production
Open AccessArticle

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

by Yunqing Cao 1,2,*, Dong Wu 1, Ping Zhu 1, Dan Shan 2,3, Xianghua Zeng 1 and Jun Xu 2
1
College of Physical Science and Technology, Yangzhou University, Yangzhou 225009, China
2
National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
3
School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 775; https://doi.org/10.3390/nano10040775
Received: 22 March 2020 / Revised: 13 April 2020 / Accepted: 15 April 2020 / Published: 17 April 2020
(This article belongs to the Special Issue Nanoparticles for Photovoltaics)
Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion efficiency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting effect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr3 QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr3 QDs show a potential application of the down-shifting effect. CsPbBr3 QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr3 QDs/mc-Si solar cells have obvious improvement in external quantum efficiency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting effect and the anti-reflection property of CsPbBr3 QDs through the formation of CsPbBr3 QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr3 QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%. View Full-Text
Keywords: caesium lead bromide perovskite quantum dots (CsPbBr3 QDs); multicrystalline Si (mc-Si); solar cell; down-shifting effect; anti-reflection property caesium lead bromide perovskite quantum dots (CsPbBr3 QDs); multicrystalline Si (mc-Si); solar cell; down-shifting effect; anti-reflection property
Show Figures

Figure 1

MDPI and ACS Style

Cao, Y.; Wu, D.; Zhu, P.; Shan, D.; Zeng, X.; Xu, J. Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties. Nanomaterials 2020, 10, 775.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop