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Open AccessArticle

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

by Naomi Mizuno 1,*, Fernando Camino 2,* and Xu Du 1,*
1
Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800, USA
2
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 666; https://doi.org/10.3390/nano10040666
Received: 3 March 2020 / Revised: 27 March 2020 / Accepted: 30 March 2020 / Published: 2 April 2020
(This article belongs to the Section Synthesis, Interfaces and Nanostructures)
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication. View Full-Text
Keywords: graphene devices; e-beam damage; e-beam lithography; aberration corrected graphene devices; e-beam damage; e-beam lithography; aberration corrected
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Mizuno, N.; Camino, F.; Du, X. In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices. Nanomaterials 2020, 10, 666.

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