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Journal: Nanomaterials, 2020
Volume: 10
Number: 2326
2326
Article: Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe₂ for Artificial Synaptic Features
Authors: by Shania Rehman, Muhammad Farooq Khan, Mehr Khalid Rahmani, Honggyun Kim, Harshada Patil, Sobia Ali Khan, Moon Hee Kang and Deok-kee Kim
Link: https://www.mdpi.com/2079-4991/10/12/2326

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