Computation 2018, 6(1), 19; https://doi.org/10.3390/computation6010019
Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions
1
Beijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China
2
The Second High School Attached to Beijing Normal University, Beijing 100088, China
3
Northwest Institute of Nuclear Technology, Xi’an 710024, China
*
Authors to whom correspondence should be addressed.
Received: 10 January 2018 / Revised: 3 February 2018 / Accepted: 12 February 2018 / Published: 14 February 2018
(This article belongs to the Section Computational Chemistry)
Abstract
Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors. View Full-Text
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
Share & Cite This Article
MDPI and ACS Style
Liang, X.; Li, Y.; Zhao, Q.; Zhang, Z.; Ouyang, X. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions. Computation 2018, 6, 19.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
Related Articles
Article Metrics
Comments
[Return to top]
Computation
EISSN 2079-3197
Published by MDPI AG, Basel, Switzerland
RSS
E-Mail Table of Contents Alert