Sheu, G.;                     Song, Y.-L.;                     Susmitha, D.;                     Issac, K.;                     Mogarala, R.    
        A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation. Membranes 2021, 11, 899.
    https://doi.org/10.3390/membranes11110899
    AMA Style
    
                                Sheu G,                                 Song Y-L,                                 Susmitha D,                                 Issac K,                                 Mogarala R.        
                A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation. Membranes. 2021; 11(11):899.
        https://doi.org/10.3390/membranes11110899
    
    Chicago/Turabian Style
    
                                Sheu, Gene,                                 Yu-Lin Song,                                 Dupati Susmitha,                                 Kutagulla Issac,                                 and Ramyasri Mogarala.        
                2021. "A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation" Membranes 11, no. 11: 899.
        https://doi.org/10.3390/membranes11110899
    
    APA Style
    
                                Sheu, G.,                                 Song, Y.-L.,                                 Susmitha, D.,                                 Issac, K.,                                 & Mogarala, R.        
        
        (2021). A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation. Membranes, 11(11), 899.
        https://doi.org/10.3390/membranes11110899