Special Issue on “Recent Advances in Novel Materials for Future Spintronics”
1. Referees for the Special Issue
2. Main Content of the Special Issue
Funding
Acknowledgments
Conflicts of Interest
Appendix A
Antonio Frontera | Attila Kákay | Anton O. Oliynyk | Akinola Oyedele |
Bhagwati Prasad | David L. Huber | Élio Alberto Périgo | Guangming Cheng |
Hannes Rijckaert | Jae Hoon Jang | Jesús López-Sánchez | Ji-Sang Park |
Kaupo Kukli | Lalita Saharan | Marijan Beg | Michael Leitner |
Masayuki Ochi | Ning Kang | Norbert M. Nemes | Supriyo Bandyopadhyay |
Shuo Chen | Soumyajyoti Haldar | Suranjan Shil | Torbjörn Björkman |
Uwe Stuhr | Weon Ho Shin | Xueqiang Alex Zhang | Masayuki Ochi |
Byeongchan Lee |
References
- Nayak, A.K.; Shekhar, C.; Winterlik, J.; Gupta, A.; Felser, C. Mn2PtIn: A tetragonal Heusler compound with exchange bias behavior. Appl. Phys. Lett. 2012, 100, 152404. [Google Scholar] [CrossRef]
- Faleev, S.V.; Ferrante, Y.; Jeong, J.; Samant, M.G.; Jones, B.; Parkin, S.S.P. Origin of the tetragonal ground state of Heusler compounds. Phys. Rev. Appl. 2017, 7, 034022. [Google Scholar] [CrossRef]
- Liu, Z.H.; Tang, Z.; Tan, J.G.; Zhang, Y.J.; Wu, Z.G.; Wang, X.T.; Liu, G.D.; Ma, X.Q. Tailoring structural and magnetic properties of Mn3− xFexGa alloys towards multifunctional applications. IUCrJ 2018, 5, 794–800. [Google Scholar] [CrossRef]
- Faleev, S.V.; Ferrante, Y.; Jeong, J.; Samant, M.G.; Jones, B.; Parkin, S.S.P. Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance. Phys. Rev. Mater. 2017, 1, 024402. [Google Scholar] [CrossRef]
- Wu, M.; Han, Y.; Bouhemadou, A.; Cheng, Z.; Khenata, R.; Kuang, M.; Wang, X.; Yang, T.; Yuan, H.; Wang, X. Site preference and tetragonal distortion in palladium-rich Heusler alloys. IUCrJ 2019, 6, 218–225. [Google Scholar] [CrossRef] [PubMed]
- Zhang, H.; Liu, W.; Lin, T.; Wang, W.; Liu, G. Phase Stability and Magnetic Properties of Mn3Z (Z = Al, Ga, In, Tl, Ge, Sn, Pb) Heusler Alloys. Appl. Sci. 2019, 9, 964. [Google Scholar] [CrossRef]
- Gao, Q.; Opahle, I.; Zhang, H. High-throughput screening for spin-gapless semiconductors in quaternary Heusler compounds. Phys. Rev. Mater. 2019, 3, 024410. [Google Scholar] [CrossRef]
- Wang, X.; Li, T.; Cheng, Z.; Wang, X.L.; Chen, H. Recent advances in Dirac spin-gapless semiconductors. Appl. Phys. Rev. 2018, 5, 041103. [Google Scholar] [CrossRef]
- Han, Y.; Khenata, R.; Li, T.; Wang, L.; Wang, X. Search for a new member of parabolic-like spin-gapless semiconductors: The case of diamond-like quaternary compound CuMn2InSe4. Results Phys. 2018, 10, 301–303. [Google Scholar] [CrossRef]
- Venkateswara, Y.; Gupta, S.; Samatham, S.S.; Varma, M.R.; Suresh, K.G.; Alam, A. Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment. Phys. Rev. B 2018, 97, 054407. [Google Scholar] [CrossRef] [Green Version]
- Wang, X.L. Proposal for a new class of materials: Spin gapless semiconductors. Phys. Rev. Lett. 2008, 100, 156404. [Google Scholar] [CrossRef] [PubMed]
- Tas, M.; Şaşıoğlu, E.; Friedrich, C.; Galanakis, I. A first-principles DFT+ GW study of spin-filter and spin-gapless semiconducting Heusler compounds. J. Magn. Magn. Mater. 2017, 441, 333–338. [Google Scholar] [CrossRef] [Green Version]
- Liu, Y.; Bose, S.K.; Kudrnovský, J. 4-d magnetism: Electronic structure and magnetism of some Mo-based alloys. J. Magn. Magn. Mater. 2017, 423, 12–19. [Google Scholar] [CrossRef]
- Jiao, Y.; Ma, F.; Zhang, C.; Bell, J.; Sanvito, S.; Du, A. First-principles prediction of spin-polarized multiple Dirac rings in manganese fluoride. Phys. Rev. Lett. 2017, 119, 016403. [Google Scholar] [CrossRef] [PubMed]
- Ma, F.; Jiao, Y.; Jiang, Z.; Du, A. Rhombohedral Lanthanum Manganite: A New Class of Dirac Half-Metal with Promising Potential in Spintronics. ACS Appl. Mater. Interfaces 2018, 10, 36088–36093. [Google Scholar] [CrossRef] [PubMed]
- Goumrhar, F.; Bahmad, L.; Mounkachi, O.; Benyoussef, A. Magnetic properties of vanadium doped CdTe: Ab initio calculations. J. Magn. Magn. Mater. 2017, 428, 368–371. [Google Scholar] [CrossRef]
- Pereira, L.M.C. Experimentally evaluating the origin of dilute magnetism in nanomaterials. J. Phys. D: Appl. Phys. 2017, 50, 393002. [Google Scholar] [CrossRef] [Green Version]
- Farghadan, R. Bipolar magnetic semiconductor in silicene nanoribbons. J. Magn. Magn. Mater. 2017, 435, 206–211. [Google Scholar] [CrossRef]
- Zha, X.H.; Ren, J.C.; Feng, L.; Bai, X.; Luo, K.; Zhang, Y.; He, J.; Huang, Q.; Francisco, J.S.; Du, S. Bipolar magnetic semiconductors among intermediate states during the conversion from Sc2C(OH)2 to Sc2CO2 MXene. Nanoscale 2018, 10, 8763–8771. [Google Scholar] [CrossRef]
- Cheng, H.; Zhou, J.; Yang, M.; Shen, L.; Linghu, J.; Wu, Q.; Qian, P.; Feng, Y.P. Robust two-dimensional bipolar magnetic semiconductors by defect engineering. J. Mater. Chem. C 2018, 6, 8435–8443. [Google Scholar] [CrossRef]
- Liu, W.; Zhang, X.; Jia, H.; Khenata, R.; Dai, X.; Liu, G. Theoretical Investigations on the Mechanical, Magneto-Electronic Properties and Half-Metallic Characteristics of ZrRhTiZ (Z = Al, Ga) Quaternary Heusler Compounds. Appl. Sci. 2019, 9, 883. [Google Scholar] [CrossRef]
- Chen, Y.; Chen, S.; Wang, B.; Wu, B.; Huang, H.; Qin, X.; Li, D.; Yan, W. Half-Metallicity and Magnetism of the Quaternary Heusler Compound TiZrCoIn1−xGex from the First-Principles Calculations. Appl. Sci. 2019, 9, 620. [Google Scholar] [CrossRef]
- Feng, L.; Ma, J.; Yang, Y.; Lin, T.; Wang, L. The Electronic, Magnetic, Half-Metallic and Mechanical Properties of the Equiatomic Quaternary Heusler Compounds FeRhCrSi and FePdCrSi: A First-Principles Study. Appl. Sci. 2018, 8, 2370. [Google Scholar] [CrossRef]
- Zhang, C.; Huang, H.; Luo, S. First Principles Study on the Effect of Pressure on the Structure, Elasticity and Magnetic Properties of Cubic GaFe(CN)6 Prussian Blue Analogue. Appl. Sci. 2019, 9, 1607. [Google Scholar] [CrossRef]
- Wang, X.; Cheng, Z.; Liu, G.; Dai, X.; Khenata, R.; Wang, L.; Bouhemadou, A. Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge) with tunable band characteristics for potential spintronic applications. IUCrJ 2017, 4, 758–768. [Google Scholar] [CrossRef] [Green Version]
- Chen, Z.; Rozale, H.; Gao, Y.; Xu, H. Strain Control of the Tunable Physical Nature of a Newly Designed Quaternary Spintronic Heusler Compound ScFeRhP. Appl. Sci. 2018, 8, 1581. [Google Scholar] [CrossRef]
- Zhu, S.; Li, T. Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon. Phys. Rev. B 2016, 93, 115401. [Google Scholar] [CrossRef]
- Gao, G.; Ding, G.; Li, J.; Yao, K.; Wu, M.; Qian, M. Monolayer MXenes: promising half-metals and spin gapless semiconductors. Nanoscale 2016, 8, 8986–8994. [Google Scholar] [CrossRef] [Green Version]
- Wang, X.; Cheng, Z.; Khenata, R.; Wu, Y.; Wang, L.; Liu, G. Lattice constant changes leading to significant changes of the spin-gapless features and physical nature in a inverse heusler compound Zr2MnGa. J. Magn. Magn. Mater. 2017, 444, 313–318. [Google Scholar] [CrossRef]
- Wang, X.; Cheng, Z.; Khenata, R.; Rozale, H.; Wang, J.; Wang, L.; Guo, R.; Liu, G. A first-principle investigation of spin-gapless semiconductivity, half-metallicity, and fully-compensated ferrimagnetism property in Mn2ZnMg inverse Heusler compound. J. Magn. Magn. Mater. 2017, 423, 285–290. [Google Scholar] [CrossRef]
- Zhang, Y.J.; Liu, Z.H.; Liu, E.K.; Liu, G.D.; Ma, X.Q.; Wu, G.H. Towards fully compensated ferrimagnetic spin gapless semiconductors for spintronic applications. EPL 2015, 111, 37009. [Google Scholar] [CrossRef]
- Wang, X.T.; Cheng, Z.X.; Wang, J.L.; Rozale, H.; Wang, L.Y.; Yu, Z.Y.; Yang, J.T.; Liu, G.D. Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr2MnAl. J. Alloys Compd. 2016, 686, 549–555. [Google Scholar] [CrossRef]
- Wang, X.; Cheng, Z.; Wang, J.; Wang, X.L.; Liu, G. Recent advances in the Heusler based spin-gapless semiconductors. J. Mater. Chem. C 2016, 4, 7176–7192. [Google Scholar] [CrossRef]
- Wei, M.-S.; Cui, Z.; Ruan, X.; Zhou, Q.-W.; Fu, X.-Y.; Liu, Z.-Y.; Ma, Q.-Y.; Feng, Y. Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl. Appl. Sci. 2018, 8, 1348. [Google Scholar] [CrossRef]
- Wu, B.; Huang, H.; Zhou, G.; Feng, Y.; Chen, Y.; Wang, X. Structure, Magnetism, and Electronic Properties of Inverse Heusler Alloy Ti2CoAl/MgO(100) Herterojuction: The Role of Interfaces. Appl. Sci. 2018, 8, 2336. [Google Scholar] [CrossRef]
- Feng, Y.; Cui, Z.; Wei, M.-S.; Wu, B.; Azam, S. Spin Gapless Semiconductor–Nonmagnetic Semiconductor Transitions in Fe-Doped Ti2CoSi: First-Principle Calculations. Appl. Sci. 2018, 8, 2200. [Google Scholar] [CrossRef]
- Chen, S.; Chen, Y.; Yan, W.; Zhou, S.; Qin, X.; Xiong, W.; Liu, L. Electronic and Magnetic Properties of Bulk and Monolayer CrSi2: A First-Principle Study. Appl. Sci. 2018, 8, 1885. [Google Scholar] [CrossRef]
- Jekal, S.; Danilo, A.; Phuong, D.; Zheng, X. First-Principles Prediction of Skyrmionic Phase Behavior in GdFe2 Films Capped by 4d and 5d Transition Metals. Appl. Sci. 2019, 9, 630. [Google Scholar] [CrossRef]
- Wu, Y.; Wang, Z.; Wang, D.; Qin, J.; Wan, Z.; Zhong, Y.; Hu, C.; Zhou, H. First-Principles Investigation of Atomic Hydrogen Adsorption and Diffusion on/into Mo-doped Nb (100) Surface. Appl. Sci. 2018, 8, 2466. [Google Scholar] [CrossRef]
- Liu, L.; Wang, D.; Zhong, Y.; Hu, C. Electronic, Optical, Mechanical and Lattice Dynamical Properties of MgBi2O6: A First-Principles Study. Appl. Sci. 2019, 9, 1267. [Google Scholar] [CrossRef]
© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Share and Cite
Wang, X.; Khenata, R.; Chen, H. Special Issue on “Recent Advances in Novel Materials for Future Spintronics”. Appl. Sci. 2019, 9, 1766. https://doi.org/10.3390/app9091766
Wang X, Khenata R, Chen H. Special Issue on “Recent Advances in Novel Materials for Future Spintronics”. Applied Sciences. 2019; 9(9):1766. https://doi.org/10.3390/app9091766
Chicago/Turabian StyleWang, Xiaotian, Rabah Khenata, and Hong Chen. 2019. "Special Issue on “Recent Advances in Novel Materials for Future Spintronics”" Applied Sciences 9, no. 9: 1766. https://doi.org/10.3390/app9091766