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Open AccessArticle

Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering

1
Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
2
Department of Nanoscience, University of Science and Technology (UST), Daejeon 305-340, Korea
3
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA
4
Physics Department, DePaul University, Chicago, IL 60614, USA
*
Author to whom correspondence should be addressed.
Current address: Coherent X-ray Scattering Group, Deutsches Elektronen-Synchrotron, Notkestr. 85, Hamburg 22607, Germany.
Appl. Sci. 2019, 9(22), 4788; https://doi.org/10.3390/app9224788
Received: 1 October 2019 / Revised: 28 October 2019 / Accepted: 6 November 2019 / Published: 8 November 2019
(This article belongs to the Section Optics and Lasers)
Photogeneration of excess charge carriers in semiconductors produces electronic strain. Under transient conditions, electron-hole pairs may be separated across a potential barrier. Using time-resolved X-ray diffraction measurements across an intrinsic AlGaAs/n-doped GaAs interface, we find that the electronic strain is only produced by holes, and that electrons are not directly observable by strain measurements. The presence of photoinduced charge carriers in the n-doped GaAs is indirectly confirmed by delayed heat generation via recombination. View Full-Text
Keywords: deformation potential; electronic strain; Gallium Arsenide; time-resolved X-ray scattering; thermal transport deformation potential; electronic strain; Gallium Arsenide; time-resolved X-ray scattering; thermal transport
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Lee, S.; Jo, W.; DiChiara, A.D.; Holmes, T.P.; Santowski, S.; Cho, Y.C.; Landahl, E.C. Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering. Appl. Sci. 2019, 9, 4788.

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