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Journal: Appl. Sci., 2019
Volume: 9
Number: 2859

Article: High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P)
Authors: by Haishen Huang, Kun Yang, Wan Zhao, Tingyan Zhou, Xiude Yang and Bo Wu
Link: https://www.mdpi.com/2076-3417/9/14/2859

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