Huang, H.; Yang, K.; Zhao, W.; Zhou, T.; Yang, X.; Wu, B.
High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P). Appl. Sci. 2019, 9, 2859.
https://doi.org/10.3390/app9142859
AMA Style
Huang H, Yang K, Zhao W, Zhou T, Yang X, Wu B.
High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P). Applied Sciences. 2019; 9(14):2859.
https://doi.org/10.3390/app9142859
Chicago/Turabian Style
Huang, Haishen, Kun Yang, Wan Zhao, Tingyan Zhou, Xiude Yang, and Bo Wu.
2019. "High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P)" Applied Sciences 9, no. 14: 2859.
https://doi.org/10.3390/app9142859
APA Style
Huang, H., Yang, K., Zhao, W., Zhou, T., Yang, X., & Wu, B.
(2019). High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P). Applied Sciences, 9(14), 2859.
https://doi.org/10.3390/app9142859