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Open AccessArticle

Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors

1
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
2
The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Sakai 599-8531, Japan
3
Advanced ICT Research Institute, National Institute of Information and Communications Technology, Kobe 651-2492, Japan
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2018, 8(8), 1274; https://doi.org/10.3390/app8081274
Received: 29 June 2018 / Revised: 17 July 2018 / Accepted: 26 July 2018 / Published: 1 August 2018
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (IDVD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed. View Full-Text
Keywords: organic field-effect transistor; short-channel effect; self-assembled monolayer; dipole electric field organic field-effect transistor; short-channel effect; self-assembled monolayer; dipole electric field
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MDPI and ACS Style

Nagase, T.; Hirose, T.; Kobayashi, T.; Ueda, R.; Otomo, A.; Naito, H. Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors. Appl. Sci. 2018, 8, 1274. https://doi.org/10.3390/app8081274

AMA Style

Nagase T, Hirose T, Kobayashi T, Ueda R, Otomo A, Naito H. Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors. Applied Sciences. 2018; 8(8):1274. https://doi.org/10.3390/app8081274

Chicago/Turabian Style

Nagase, Takashi; Hirose, Takeshi; Kobayashi, Takashi; Ueda, Rieko; Otomo, Akira; Naito, Hiroyoshi. 2018. "Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors" Appl. Sci. 8, no. 8: 1274. https://doi.org/10.3390/app8081274

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