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Open AccessArticle

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

1
Optoelectronics and Biomedical Photonics Group, AIPT, Aston University, Birmingham B4 7ET, UK
2
Nano-Technology Lab., Ostendo Technologies Inc., 6185 Paseo del Norte, Carlsbad, CA 92011, USA
3
Physics of Semiconductor Heterostructure Lab., Ioffe Institute, 26 Politekhnicheskaya Str., 194021 St. Petersburg, Russia
4
Optoelectronics Department, St. Petersburg State Electrotechnical University (LETI), 5 Prof. Popova Str., 197022 St. Petersburg, Russia
*
Author to whom correspondence should be addressed.
Appl. Sci. 2018, 8(7), 1158; https://doi.org/10.3390/app8071158
Received: 23 May 2018 / Revised: 20 June 2018 / Accepted: 13 July 2018 / Published: 17 July 2018
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution. View Full-Text
Keywords: monolithic LED; high CRI; light-emitting diodes; color rendering; colorimetry monolithic LED; high CRI; light-emitting diodes; color rendering; colorimetry
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MDPI and ACS Style

Yadav, A.; Titkov, I.E.; Sakharov, A.V.; Lundin, W.V.; Nikolaev, A.E.; Sokolovskii, G.S.; Tsatsulnikov, A.F.; Rafailov, E.U. Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index. Appl. Sci. 2018, 8, 1158.

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