Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”
Abstract
:1. Introduction
2. Model
2.1. Radiative Recombination Coefficient
2.2. Auger Recombination Coefficient
2.3. Localization Energy
3. Results and Discussion
3.1. Recombination Coefficients
3.2. Efficiency of Polar and Nonpolar LEDs in the “Green Gap”
3.3. Model Limitations and Outlook for Future Studies
4. Conclusions
Acknowledgments
Conflicts of Interest
References
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Karpov, S.Y. Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”. Appl. Sci. 2018, 8, 818. https://doi.org/10.3390/app8050818
Karpov SY. Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”. Applied Sciences. 2018; 8(5):818. https://doi.org/10.3390/app8050818
Chicago/Turabian StyleKarpov, Sergey Yu. 2018. "Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”" Applied Sciences 8, no. 5: 818. https://doi.org/10.3390/app8050818
APA StyleKarpov, S. Y. (2018). Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”. Applied Sciences, 8(5), 818. https://doi.org/10.3390/app8050818