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Open AccessFeature PaperArticle

Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”

STR Group—Soft-Impact, Ltd., P.O. Box 83, 27 Engels Ave., 194156 St. Petersburg, Russia
Appl. Sci. 2018, 8(5), 818; https://doi.org/10.3390/app8050818
Received: 16 March 2018 / Revised: 3 May 2018 / Accepted: 17 May 2018 / Published: 18 May 2018
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
A semi-empirical model of carrier recombination accounting for hole localization by composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well structures. The model provides quantitative agreement with available data on wavelength-dependent radiative and Auger recombination coefficients in polar LEDs. Comparison of calculated internal quantum efficiencies of polar and nonpolar LEDs enables an assessment of the roles of carrier localization, quantum-confined Stark effect, and native material properties for the efficiency decline in the “green gap”. View Full-Text
Keywords: InGaN; light-emitting diodes; efficiency; Auger recombination; “green gap”; recombination coefficients; carrier localization; composition fluctuations; quantum-confined Stark effect InGaN; light-emitting diodes; efficiency; Auger recombination; “green gap”; recombination coefficients; carrier localization; composition fluctuations; quantum-confined Stark effect
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Karpov, S.Y. Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”. Appl. Sci. 2018, 8, 818.

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