Next Article in Journal
Potential of TCPInSAR in Monitoring Linear Infrastructure with a Small Dataset of SAR Images: Application of the Donghai Bridge, China
Next Article in Special Issue
Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
Previous Article in Journal
A Study on the Influence of Stage Load on Health Monitoring of Axial Concrete Members Using Piezoelectric Based Smart Aggregate
Previous Article in Special Issue
Printing Speed and Quality Enhancement by Controlling the Surface Energy of Cliché in Reverse Offset Printing
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Appl. Sci. 2018, 8(3), 424; https://doi.org/10.3390/app8030424

Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 16419, Korea
*
Authors to whom correspondence should be addressed.
Received: 1 February 2018 / Revised: 28 February 2018 / Accepted: 8 March 2018 / Published: 12 March 2018
(This article belongs to the Special Issue Thin-Film Transistors)
Full-Text   |   PDF [2223 KB, uploaded 12 March 2018]   |  

Abstract

It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide (Al2O3) passivation on multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method. View Full-Text
Keywords: transition metal dichalcogenide; molybdenum disulfide; thin-film transistor; passivation; contact resistance; intrinsic mobility transition metal dichalcogenide; molybdenum disulfide; thin-film transistor; passivation; contact resistance; intrinsic mobility
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Supplementary material

SciFeed

Share & Cite This Article

MDPI and ACS Style

Jeong, S.H.; Liu, N.; Park, H.; Hong, Y.K.; Kim, S. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors. Appl. Sci. 2018, 8, 424.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top