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Article

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

1
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Hyun Jae Kim
Appl. Sci. 2017, 7(8), 820; https://doi.org/10.3390/app7080820
Received: 10 June 2017 / Revised: 22 July 2017 / Accepted: 7 August 2017 / Published: 10 August 2017
(This article belongs to the Special Issue Thin-Film Transistor)
The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 °C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 μΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu2O appeared when the annealing temperature reached above 350 °C, which accounts for the increase of the resistivity. Based on Al2O3 and SiO2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT). View Full-Text
Keywords: Cu-Cr-Zr alloy; conductivity; adhesion; thin-film transistor; gate electrode Cu-Cr-Zr alloy; conductivity; adhesion; thin-film transistor; gate electrode
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MDPI and ACS Style

Peng, J.; Lu, K.; Hu, S.; Fang, Z.; Ning, H.; Wei, J.; Zhu, Z.; Zhou, Y.; Wang, L.; Yao, R.; Lu, X. High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode. Appl. Sci. 2017, 7, 820. https://doi.org/10.3390/app7080820

AMA Style

Peng J, Lu K, Hu S, Fang Z, Ning H, Wei J, Zhu Z, Zhou Y, Wang L, Yao R, Lu X. High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode. Applied Sciences. 2017; 7(8):820. https://doi.org/10.3390/app7080820

Chicago/Turabian Style

Peng, Junbiao; Lu, Kuankuan; Hu, Shiben; Fang, Zhiqiang; Ning, Honglong; Wei, Jinglin; Zhu, Zhennan; Zhou, Yicong; Wang, Lei; Yao, Rihui; Lu, Xubing. 2017. "High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode" Appl. Sci. 7, no. 8: 820. https://doi.org/10.3390/app7080820

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