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N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor

1
Department of Chemistry, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555, Japan
2
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
*
Author to whom correspondence should be addressed.
Appl. Sci. 2017, 7(11), 1111; https://doi.org/10.3390/app7111111
Received: 14 September 2017 / Revised: 13 October 2017 / Accepted: 25 October 2017 / Published: 27 October 2017
(This article belongs to the Section Materials)
Based on the crystal structure analysis, the overlap integral between the frontier molecular orbitals of adjacent F8CuPcs in the one-dimensional chain is estimated: the overlap integral between the lowest unoccupied molecular orbitals is 5.4 × 10−3, which is larger than that in a typical n-type semiconducing material F16CuPc (2.1 × 10−3), whereas that between the highest occupied molecular orbitals is 2.9 × 10−4. Contrary to previous studies in air, we found that an organic field-effect transistor (OFET) composed of F8CuPc essentially shows clear n-type semiconducting behavior in vacuum. View Full-Text
Keywords: copper octafluorophthalocyanine; organic semiconductor; n-type semiconductor; OFET copper octafluorophthalocyanine; organic semiconductor; n-type semiconductor; OFET
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MDPI and ACS Style

Matumoto, A.; Hoshino, N.; Akutagawa, T.; Matsuda, M. N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor. Appl. Sci. 2017, 7, 1111.

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