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Appl. Sci. 2017, 7(11), 1111; https://doi.org/10.3390/app7111111

N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor

1
Department of Chemistry, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555, Japan
2
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
*
Author to whom correspondence should be addressed.
Received: 14 September 2017 / Revised: 13 October 2017 / Accepted: 25 October 2017 / Published: 27 October 2017
(This article belongs to the Section Materials)
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Abstract

Based on the crystal structure analysis, the overlap integral between the frontier molecular orbitals of adjacent F8CuPcs in the one-dimensional chain is estimated: the overlap integral between the lowest unoccupied molecular orbitals is 5.4 × 10−3, which is larger than that in a typical n-type semiconducing material F16CuPc (2.1 × 10−3), whereas that between the highest occupied molecular orbitals is 2.9 × 10−4. Contrary to previous studies in air, we found that an organic field-effect transistor (OFET) composed of F8CuPc essentially shows clear n-type semiconducting behavior in vacuum. View Full-Text
Keywords: copper octafluorophthalocyanine; organic semiconductor; n-type semiconductor; OFET copper octafluorophthalocyanine; organic semiconductor; n-type semiconductor; OFET
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Matumoto, A.; Hoshino, N.; Akutagawa, T.; Matsuda, M. N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor. Appl. Sci. 2017, 7, 1111.

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