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Open AccessArticle

Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

1
Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
2
Industrial Technology Research Institute South, Tainan 734, Taiwan
3
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: Chien-Hung Liu and Huei-Chu Weng
Appl. Sci. 2016, 6(2), 60; https://doi.org/10.3390/app6020060
Received: 29 December 2015 / Revised: 13 February 2016 / Accepted: 16 February 2016 / Published: 22 February 2016
(This article belongs to the Special Issue Selected Papers from the 2015 International Conference on Inventions)
Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO/n-GaN system. By placing a thin Ti interlayer between the ITO-ZnO/n-GaN interface, nonalloyed ohmic contact was achieved. The inset Ti interlayer was both beneficial both for enhancing the outdiffusion of the nitrogen atoms at the surface of the n-GaN and suppressing the indiffusion of oxygen atoms from the surface of the ITO-ZnO to n-GaN. The figure-of-merit (FOM), evaluated from the specific contact resistance and optical property of the Ti/ITO-ZnO system’s contact to the n-GaN epilayer, was optimized further at an adequate thickness of the Ti interlayer. View Full-Text
Keywords: cosputtered ITO-ZnO; n-GaN; transparent electrode; Ti interlayer; ohmic contact; figure-of-merit cosputtered ITO-ZnO; n-GaN; transparent electrode; Ti interlayer; ohmic contact; figure-of-merit
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MDPI and ACS Style

Hsiao, W.-H.; Chen, T.-H.; Lai, L.-W.; Lee, C.-T.; Li, J.-Y.; Lin, H.-J.; Wu, N.-J.; Liu, D.-S. Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN. Appl. Sci. 2016, 6, 60.

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